[9633PC Stock]
- Nimewo Pati:
- RJH65D27BDPQ-A0#T2
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- IGBT TRENCH 650V 100A TO247A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJH65D27BDPQ-A0#T2 electronic components. RJH65D27BDPQ-A0#T2 can be shipped within 24 hours after order. If you have any demands for RJH65D27BDPQ-A0#T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJH65D27BDPQ-A0#T2 Atribi pwodwi yo
Nimewo Pati :
RJH65D27BDPQ-A0#T2
Manifakti :
Renesas Electronics America
Deskripsyon :
IGBT TRENCH 650V 100A TO247A
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
100A
Kouran - Pèseptè batman (Icm) :
-
Vce (sou) (Max) @ Vge, Ic :
1.65V @ 15V, 50A
Pouvwa - Max :
375W
Oblije chanje enèji :
1mJ (on), 1.5mJ (off)
Kalite Antre :
Standard
Gate chaje :
175nC
Td (on / off) @ 25 ° C :
20ns/165ns
Kondisyon egzamen an :
400V, 50A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
80ns
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247A
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