Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 30V .1A EMT6
Estati Pati :
Not For New Designs
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100mA
RD sou (Max) @ Id, Vgs :
8 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
13pF @ 5V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
EMT6