APT58M80J Pricing (USD) [1728PC Stock]
- 1 pcs$25.06453
- 10 pcs$23.59031
- 25 pcs$22.11609
- 100 pcs$21.08400
- Nimewo Pati:
- APT58M80J
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 800V 58A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT58M80J electronic components. APT58M80J can be shipped within 24 hours after order. If you have any demands for APT58M80J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT58M80J Atribi pwodwi yo
Nimewo Pati :
APT58M80J
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 800V 58A SOT-227
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60W (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 43A, 10V
Vgs (th) (Max) @ Id :
5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
570nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
17550pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
960W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227
Pake / Ka :
SOT-227-4, miniBLOC
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