[8872PC Stock]
- Nimewo Pati:
- BUK951R6-30E,127
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 120A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Rèkteur - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. BUK951R6-30E,127 electronic components. BUK951R6-30E,127 can be shipped within 24 hours after order. If you have any demands for BUK951R6-30E,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK951R6-30E,127 Atribi pwodwi yo
Nimewo Pati :
BUK951R6-30E,127
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 30V 120A TO220AB
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
1.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
113nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
16150pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
349W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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