[3106PC Stock]
- Nimewo Pati:
- TSM120N10PQ56 RLG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CH 100V 58A 8PDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM120N10PQ56 RLG electronic components. TSM120N10PQ56 RLG can be shipped within 24 hours after order. If you have any demands for TSM120N10PQ56 RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM120N10PQ56 RLG Atribi pwodwi yo
Nimewo Pati :
TSM120N10PQ56 RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 100V 58A 8PDFN
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
145nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3902pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
36W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)
Pake / Ka :
8-PowerTDFN
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