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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTB082N65S3F

ON Semiconductor - NTB082N65S3F

KEY Part #: K6397440

NTB082N65S3F Pricing (USD) [19405PC Stock]

  • 1 pcs$2.12375
Nimewo Pati:
NTB082N65S3F
Manifakti:
ON Semiconductor
Detaye deskripsyon:
SUPERFET3 650V D2PAK PKG.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - SCR, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTB082N65S3F electronic components. NTB082N65S3F can be shipped within 24 hours after order. If you have any demands for NTB082N65S3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTB082N65S3F Atribi pwodwi yo

Nimewo Pati : NTB082N65S3F
Manifakti : ON Semiconductor
Deskripsyon : SUPERFET3 650V D2PAK PKG
Seri : SuperFET® III
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 82 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3410pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 313W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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