[12498PC Stock]
- Nimewo Pati:
- IRFD9220
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 200V 0.56A 4-DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFD9220 electronic components. IRFD9220 can be shipped within 24 hours after order. If you have any demands for IRFD9220, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD9220 Atribi pwodwi yo
Nimewo Pati :
IRFD9220
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 200V 0.56A 4-DIP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
560mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-DIP, Hexdip, HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)
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