IXYS - IXYX100N65B3D1

KEY Part #: K6422071

IXYX100N65B3D1 Pricing (USD) [6401PC Stock]

  • 1 pcs$6.77790
  • 30 pcs$6.74418

Nimewo Pati:
IXYX100N65B3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 650V 188A 1150W PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in IXYS IXYX100N65B3D1 electronic components. IXYX100N65B3D1 can be shipped within 24 hours after order. If you have any demands for IXYX100N65B3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYX100N65B3D1 Atribi pwodwi yo

Nimewo Pati : IXYX100N65B3D1
Manifakti : IXYS
Deskripsyon : IGBT 650V 188A 1150W PLUS247
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 225A
Kouran - Pèseptè batman (Icm) : 460A
Vce (sou) (Max) @ Vge, Ic : 1.85V @ 15V, 70A
Pouvwa - Max : 830W
Oblije chanje enèji : 1.27mJ (on), 1.37mJ (off)
Kalite Antre : Standard
Gate chaje : 168nC
Td (on / off) @ 25 ° C : 29ns/150ns
Kondisyon egzamen an : 400V, 50A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) : 156ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PLUS247™-3