SI1922EDH-T1-GE3 Pricing (USD) [575693PC Stock]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Nimewo Pati:
- SI1922EDH-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 1.3A SOT-363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI1922EDH-T1-GE3 electronic components. SI1922EDH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1922EDH-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1922EDH-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI1922EDH-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 1.3A SOT-363
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.3A
RD sou (Max) @ Id, Vgs :
198 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.25W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
SC-70-6 (SOT-363)
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