FQD10N20LTM Pricing (USD) [226092PC Stock]
- 1 pcs$0.18272
- 2,500 pcs$0.18181
- Nimewo Pati:
- FQD10N20LTM
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 200V 7.6A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - JFETs, Diodes - Bridge rèktifikateur, Tiristors - SCR and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQD10N20LTM electronic components. FQD10N20LTM can be shipped within 24 hours after order. If you have any demands for FQD10N20LTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD10N20LTM Atribi pwodwi yo
Nimewo Pati :
FQD10N20LTM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 200V 7.6A DPAK
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
360 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
830pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 51W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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