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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. 2SJ652-1E

ON Semiconductor - 2SJ652-1E

KEY Part #: K6398896

2SJ652-1E Pricing (USD) [39965PC Stock]

  • 1 pcs$0.92818
  • 10 pcs$0.83954
  • 100 pcs$0.67448
  • 500 pcs$0.52460
  • 1,000 pcs$0.43467
Nimewo Pati:
2SJ652-1E
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 60V 28A TO-220FP-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor 2SJ652-1E electronic components. 2SJ652-1E can be shipped within 24 hours after order. If you have any demands for 2SJ652-1E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SJ652-1E Atribi pwodwi yo

Nimewo Pati : 2SJ652-1E
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 60V 28A TO-220FP-3
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 28A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 38 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4360pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta), 30W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F-3SG
Pake / Ka : TO-220-3 Full Pack

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