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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDME910PZT

ON Semiconductor - FDME910PZT

KEY Part #: K6409597

FDME910PZT Pricing (USD) [314886PC Stock]

  • 1 pcs$0.11805
  • 5,000 pcs$0.11746
Nimewo Pati:
FDME910PZT
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P CH 20V 8A MICROFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDME910PZT electronic components. FDME910PZT can be shipped within 24 hours after order. If you have any demands for FDME910PZT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDME910PZT Atribi pwodwi yo

Nimewo Pati : FDME910PZT
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P CH 20V 8A MICROFET
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 24 mOhm @ 8A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 2110pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : MicroFet 1.6x1.6 Thin
Pake / Ka : 6-PowerUFDFN

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