IXYS - IXXH75N60C3D1

KEY Part #: K6421996

IXXH75N60C3D1 Pricing (USD) [10033PC Stock]

  • 1 pcs$4.32451
  • 30 pcs$4.30299

Nimewo Pati:
IXXH75N60C3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 600V 150A 750W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXXH75N60C3D1 electronic components. IXXH75N60C3D1 can be shipped within 24 hours after order. If you have any demands for IXXH75N60C3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXXH75N60C3D1 Atribi pwodwi yo

Nimewo Pati : IXXH75N60C3D1
Manifakti : IXYS
Deskripsyon : IGBT 600V 150A 750W TO247
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 150A
Kouran - Pèseptè batman (Icm) : 300A
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 60A
Pouvwa - Max : 750W
Oblije chanje enèji : 1.6mJ (on), 800µJ (off)
Kalite Antre : Standard
Gate chaje : 107nC
Td (on / off) @ 25 ° C : 35ns/90ns
Kondisyon egzamen an : 400V, 60A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 25ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AD