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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDB0105N407L

ON Semiconductor - FDB0105N407L

KEY Part #: K6394426

FDB0105N407L Pricing (USD) [28969PC Stock]

  • 1 pcs$1.42979
  • 800 pcs$1.42268
Nimewo Pati:
FDB0105N407L
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 40V 460A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDB0105N407L electronic components. FDB0105N407L can be shipped within 24 hours after order. If you have any demands for FDB0105N407L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB0105N407L Atribi pwodwi yo

Nimewo Pati : FDB0105N407L
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 40V 460A
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 460A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 0.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 291nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 23100pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263)
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

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