Infineon Technologies - IRF7202TR

KEY Part #: K6415119

[12520PC Stock]


    Nimewo Pati:
    IRF7202TR
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 20V 2.5A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRF7202TR electronic components. IRF7202TR can be shipped within 24 hours after order. If you have any demands for IRF7202TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF7202TR Atribi pwodwi yo

    Nimewo Pati : IRF7202TR
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 20V 2.5A 8-SOIC
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 20V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.6W (Ta), 2.5W (Tc)
    Operating Tanperati : -
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-SO
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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