Nimewo Pati :
IPD60R1K5CEAUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CHANNEL 650V 5A TO252
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 90µA
Chaje Gate (Qg) (Max) @ Vgs :
9.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
200pF @ 100V
Disipasyon Pouvwa (Max) :
49W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO252
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63