Infineon Technologies - IPD60R1K5CEAUMA1

KEY Part #: K6403236

IPD60R1K5CEAUMA1 Pricing (USD) [342242PC Stock]

  • 1 pcs$0.10807
  • 2,500 pcs$0.08921

Nimewo Pati:
IPD60R1K5CEAUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CHANNEL 650V 5A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R1K5CEAUMA1 Atribi pwodwi yo

Nimewo Pati : IPD60R1K5CEAUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CHANNEL 650V 5A TO252
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 90µA
Chaje Gate (Qg) (Max) @ Vgs : 9.4nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 200pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 49W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63