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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. CEDM8001 TR

Central Semiconductor Corp - CEDM8001 TR

KEY Part #: K6416021

CEDM8001 TR Pricing (USD) [476542PC Stock]

  • 1 pcs$0.07762
  • 8,000 pcs$0.07696
Nimewo Pati:
CEDM8001 TR
Manifakti:
Central Semiconductor Corp
Detaye deskripsyon:
MOSFET P-CH 20V 0.1A SOT-883.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - Objektif espesyal and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Central Semiconductor Corp CEDM8001 TR electronic components. CEDM8001 TR can be shipped within 24 hours after order. If you have any demands for CEDM8001 TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CEDM8001 TR Atribi pwodwi yo

Nimewo Pati : CEDM8001 TR
Manifakti : Central Semiconductor Corp
Deskripsyon : MOSFET P-CH 20V 0.1A SOT-883
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4V
RD sou (Max) @ Id, Vgs : 8 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.66nC @ 4.5V
Vgs (Max) : 10V
Antre kapasite (Ciss) (Max) @ Vds : 45pF @ 3V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 100mW (Ta)
Operating Tanperati : -65°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-883
Pake / Ka : SC-101, SOT-883
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