[12250PC Stock]
- Nimewo Pati:
- STH15NB50FI
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 500V 10.5A ISOWAT218.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STH15NB50FI electronic components. STH15NB50FI can be shipped within 24 hours after order. If you have any demands for STH15NB50FI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH15NB50FI Atribi pwodwi yo
Nimewo Pati :
STH15NB50FI
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 500V 10.5A ISOWAT218
Seri :
PowerMESH™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
360 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
80W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOWATT-218
Pake / Ka :
ISOWATT-218-3
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