[2222PC Stock]
- Nimewo Pati:
- SSM3J16CT(TPL3)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 20V 0.1A CST3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3J16CT(TPL3) electronic components. SSM3J16CT(TPL3) can be shipped within 24 hours after order. If you have any demands for SSM3J16CT(TPL3), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J16CT(TPL3) Atribi pwodwi yo
Nimewo Pati :
SSM3J16CT(TPL3)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 0.1A CST3
Seri :
π-MOSVI
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4V
RD sou (Max) @ Id, Vgs :
8 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id :
1.1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
11pF @ 3V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CST3
Pake / Ka :
SC-101, SOT-883
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