Toshiba Semiconductor and Storage - TK290P60Y,RQ

KEY Part #: K6402041

TK290P60Y,RQ Pricing (USD) [167001PC Stock]

  • 1 pcs$0.24485
  • 2,000 pcs$0.24363

Nimewo Pati:
TK290P60Y,RQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 600V 11.5A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - JFETs, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK290P60Y,RQ electronic components. TK290P60Y,RQ can be shipped within 24 hours after order. If you have any demands for TK290P60Y,RQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK290P60Y,RQ Atribi pwodwi yo

Nimewo Pati : TK290P60Y,RQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 11.5A DPAK
Seri : DTMOSV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 290 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 450µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 730pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 100W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Ou ka enterese tou
  • VN0109N3-G

    Microchip Technology

    MOSFET N-CH 90V 0.35A TO92-3.

  • ZVN3310ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 200MA TO92-3.

  • BS107PSTZ

    Diodes Incorporated

    MOSFET N-CH 200V 0.12A TO92-3.

  • ZVN2106ASTZ

    Diodes Incorporated

    MOSFET N-CH 60V 0.45A TO92-3.

  • LND150N3-G-P003

    Microchip Technology

    MOSFET N-CH 500V 30MA TO92-3.

  • ZVN2110ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 320MA TO92-3.