ON Semiconductor - FGA20N120FTDTU

KEY Part #: K6423161

FGA20N120FTDTU Pricing (USD) [20374PC Stock]

  • 1 pcs$1.96111
  • 10 pcs$1.76192
  • 100 pcs$1.44373
  • 500 pcs$1.22902
  • 1,000 pcs$0.98337

Nimewo Pati:
FGA20N120FTDTU
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1200V 40A 298W TO3PN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGA20N120FTDTU Atribi pwodwi yo

Nimewo Pati : FGA20N120FTDTU
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1200V 40A 298W TO3PN
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 40A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 20A
Pouvwa - Max : 298W
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 137nC
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : 447ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3P-3, SC-65-3
Pake Aparèy Founisè : TO-3P