BSL806NH6327XTSA1 Pricing (USD) [481993PC Stock]
- 1 pcs$0.07712
- 3,000 pcs$0.07674
- Nimewo Pati:
- BSL806NH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2 N-CH 20V 2.3A TSOP6-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Rèkteur - Single, Modil pouvwa chofè and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSL806NH6327XTSA1 electronic components. BSL806NH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSL806NH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSL806NH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
BSL806NH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2 N-CH 20V 2.3A TSOP6-6
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 1.8V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A (Ta)
RD sou (Max) @ Id, Vgs :
57 mOhm @ 2.3A, 2.5V
Vgs (th) (Max) @ Id :
750mV @ 11µA
Chaje Gate (Qg) (Max) @ Vgs :
1.7nC @ 2.5V
Antre kapasite (Ciss) (Max) @ Vds :
259pF @ 10V
Pouvwa - Max :
500mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
PG-TSOP-6-6
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