IXYS - IXKN45N80C

KEY Part #: K6396293

IXKN45N80C Pricing (USD) [2689PC Stock]

  • 1 pcs$16.99174
  • 10 pcs$16.90721

Nimewo Pati:
IXKN45N80C
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 800V 44A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in IXYS IXKN45N80C electronic components. IXKN45N80C can be shipped within 24 hours after order. If you have any demands for IXKN45N80C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXKN45N80C Atribi pwodwi yo

Nimewo Pati : IXKN45N80C
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 800V 44A SOT-227B
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 44A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 74 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 360nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 380W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC