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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDB0630N1507L

ON Semiconductor - FDB0630N1507L

KEY Part #: K6392827

FDB0630N1507L Pricing (USD) [25024PC Stock]

  • 1 pcs$1.65517
  • 800 pcs$1.64694
Nimewo Pati:
FDB0630N1507L
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 150V 130A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDB0630N1507L electronic components. FDB0630N1507L can be shipped within 24 hours after order. If you have any demands for FDB0630N1507L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB0630N1507L Atribi pwodwi yo

Nimewo Pati : FDB0630N1507L
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 150V 130A
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 6.4 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 135nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9895pF @ 75V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263)
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

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