Nexperia USA Inc. - BUK7E2R6-60E,127

KEY Part #: K6416583

BUK7E2R6-60E,127 Pricing (USD) [35157PC Stock]

  • 1 pcs$1.04943
  • 10 pcs$0.94700
  • 100 pcs$0.76111
  • 500 pcs$0.59196
  • 1,000 pcs$0.49048

Nimewo Pati:
BUK7E2R6-60E,127
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 60V 120A I2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Tiristors - SCR and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. BUK7E2R6-60E,127 electronic components. BUK7E2R6-60E,127 can be shipped within 24 hours after order. If you have any demands for BUK7E2R6-60E,127, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK7E2R6-60E,127 Atribi pwodwi yo

Nimewo Pati : BUK7E2R6-60E,127
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 60V 120A I2PAK
Seri : Automotive, AEC-Q101, TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 158nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 11180pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 349W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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