Microsemi Corporation - APT35GP120B2DQ2G

KEY Part #: K6421751

APT35GP120B2DQ2G Pricing (USD) [4309PC Stock]

  • 1 pcs$10.05361
  • 10 pcs$9.13998
  • 25 pcs$8.45448
  • 100 pcs$7.38992
  • 250 pcs$6.73790

Nimewo Pati:
APT35GP120B2DQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 96A 543W TMAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT35GP120B2DQ2G Atribi pwodwi yo

Nimewo Pati : APT35GP120B2DQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 96A 543W TMAX
Seri : POWER MOS 7®
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 96A
Kouran - Pèseptè batman (Icm) : 140A
Vce (sou) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Pouvwa - Max : 543W
Oblije chanje enèji : 750µJ (on), 680µJ (off)
Kalite Antre : Standard
Gate chaje : 150nC
Td (on / off) @ 25 ° C : 16ns/95ns
Kondisyon egzamen an : 600V, 35A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Variant
Pake Aparèy Founisè : -