SI3430DV-T1-GE3 Pricing (USD) [195156PC Stock]
- 1 pcs$0.18953
- 3,000 pcs$0.16019
- Nimewo Pati:
- SI3430DV-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.8A 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI3430DV-T1-GE3 electronic components. SI3430DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3430DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3430DV-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI3430DV-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 1.8A 6-TSOP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
170 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
6.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.14W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSOP
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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