Infineon Technologies - IRFR825TRPBF

KEY Part #: K6420364

IRFR825TRPBF Pricing (USD) [188027PC Stock]

  • 1 pcs$0.19671
  • 2,000 pcs$0.16810

Nimewo Pati:
IRFR825TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 500V 6A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFR825TRPBF electronic components. IRFR825TRPBF can be shipped within 24 hours after order. If you have any demands for IRFR825TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR825TRPBF Atribi pwodwi yo

Nimewo Pati : IRFR825TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 500V 6A DPAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.3 Ohm @ 3.7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1346pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 119W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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