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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTD18N06-1G

ON Semiconductor - NTD18N06-1G

KEY Part #: K6409200

[364PC Stock]

    Nimewo Pati:
    NTD18N06-1G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 60V 18A IPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTD18N06-1G electronic components. NTD18N06-1G can be shipped within 24 hours after order. If you have any demands for NTD18N06-1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTD18N06-1G Atribi pwodwi yo

    Nimewo Pati : NTD18N06-1G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 60V 18A IPAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 60 mOhm @ 9A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 710pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.1W (Ta), 55W (Tj)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I-PAK
    Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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