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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. VP2206N2

Microchip Technology - VP2206N2

KEY Part #: K6398843

VP2206N2 Pricing (USD) [6926PC Stock]

  • 1 pcs$6.06403
  • 25 pcs$5.56022
  • 100 pcs$5.40289
Nimewo Pati:
VP2206N2
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET P-CH 60V 750MA 3TO-39.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Microchip Technology VP2206N2 electronic components. VP2206N2 can be shipped within 24 hours after order. If you have any demands for VP2206N2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VP2206N2 Atribi pwodwi yo

Nimewo Pati : VP2206N2
Manifakti : Microchip Technology
Deskripsyon : MOSFET P-CH 60V 750MA 3TO-39
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 750mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 450pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-39
Pake / Ka : TO-205AD, TO-39-3 Metal Can
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