Vishay Siliconix - SIR626LDP-T1-RE3

KEY Part #: K6396205

SIR626LDP-T1-RE3 Pricing (USD) [101730PC Stock]

  • 1 pcs$0.38436

Nimewo Pati:
SIR626LDP-T1-RE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CHAN 60-V POWERPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIR626LDP-T1-RE3 electronic components. SIR626LDP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR626LDP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR626LDP-T1-RE3 Atribi pwodwi yo

Nimewo Pati : SIR626LDP-T1-RE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CHAN 60-V POWERPAK SO-8
Seri : TrenchFET® Gen IV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 135nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5900pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 6.25W (Ta), 104W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8