IXGT15N120B Pricing (USD) [10861PC Stock]
- 1 pcs$3.99499
- 30 pcs$3.97511
- Nimewo Pati:
- IXGT15N120B
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 30A 180W TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXGT15N120B electronic components. IXGT15N120B can be shipped within 24 hours after order. If you have any demands for IXGT15N120B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGT15N120B Atribi pwodwi yo
Nimewo Pati :
IXGT15N120B
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 30A 180W TO268
Seri :
HiPerFAST™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
30A
Kouran - Pèseptè batman (Icm) :
60A
Vce (sou) (Max) @ Vge, Ic :
3.2V @ 15V, 15A
Pouvwa - Max :
180W
Oblije chanje enèji :
1.75mJ (off)
Kalite Antre :
Standard
Gate chaje :
69nC
Td (on / off) @ 25 ° C :
25ns/180ns
Kondisyon egzamen an :
960V, 15A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè :
TO-268
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