Infineon Technologies - IPU20N03L G

KEY Part #: K6409767

[8535PC Stock]


    Nimewo Pati:
    IPU20N03L G
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 30V 30A IPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPU20N03L G electronic components. IPU20N03L G can be shipped within 24 hours after order. If you have any demands for IPU20N03L G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPU20N03L G Atribi pwodwi yo

    Nimewo Pati : IPU20N03L G
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 30V 30A IPAK
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 20 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 2V @ 25µA
    Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 60W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : P-TO251-3-1
    Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA