[13871PC Stock]
- Nimewo Pati:
- TPCF8B01(TE85L,F,M
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 20V 2.7A VS-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M electronic components. TPCF8B01(TE85L,F,M can be shipped within 24 hours after order. If you have any demands for TPCF8B01(TE85L,F,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCF8B01(TE85L,F,M Atribi pwodwi yo
Nimewo Pati :
TPCF8B01(TE85L,F,M
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 2.7A VS-8
Seri :
U-MOSIII
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
470pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
330mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VS-8 (2.9x1.5)
Pake / Ka :
8-SMD, Flat Lead
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