RD3H200SNFRATL Pricing (USD) [149978PC Stock]
- 1 pcs$0.24662
- Nimewo Pati:
- RD3H200SNFRATL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- RD3H200SNFRA IS THE HIGH RELIABI.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RD3H200SNFRATL electronic components. RD3H200SNFRATL can be shipped within 24 hours after order. If you have any demands for RD3H200SNFRATL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RD3H200SNFRATL Atribi pwodwi yo
Nimewo Pati :
RD3H200SNFRATL
Manifakti :
Rohm Semiconductor
Deskripsyon :
RD3H200SNFRA IS THE HIGH RELIABI
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
45V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
28 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
950pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
20W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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