Infineon Technologies - IPC50N04S5L5R5ATMA1

KEY Part #: K6420985

IPC50N04S5L5R5ATMA1 Pricing (USD) [311768PC Stock]

  • 1 pcs$0.12289
  • 5,000 pcs$0.12228

Nimewo Pati:
IPC50N04S5L5R5ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
N-CHANNEL30/40V.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPC50N04S5L5R5ATMA1 Atribi pwodwi yo

Nimewo Pati : IPC50N04S5L5R5ATMA1
Manifakti : Infineon Technologies
Deskripsyon : N-CHANNEL30/40V
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2V @ 13µA
Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 1209pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 42W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8-33
Pake / Ka : 8-PowerTDFN