Infineon Technologies - SPW17N80C3FKSA1

KEY Part #: K6416313

SPW17N80C3FKSA1 Pricing (USD) [13397PC Stock]

  • 1 pcs$3.07609

Nimewo Pati:
SPW17N80C3FKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 800V 17A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPW17N80C3FKSA1 Atribi pwodwi yo

Nimewo Pati : SPW17N80C3FKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 800V 17A TO-247
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 290 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 177nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2320pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 227W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO247-3
Pake / Ka : TO-247-3