Nexperia USA Inc. - BUK7Y1R7-40HX

KEY Part #: K6419453

BUK7Y1R7-40HX Pricing (USD) [112952PC Stock]

  • 1 pcs$0.32746

Nimewo Pati:
BUK7Y1R7-40HX
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 40V 120A LFPAK56.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK7Y1R7-40HX Atribi pwodwi yo

Nimewo Pati : BUK7Y1R7-40HX
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 40V 120A LFPAK56
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 3.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 96nC @ 10V
Vgs (Max) : +20V, -10V
Antre kapasite (Ciss) (Max) @ Vds : 6142pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 294W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK56, Power-SO8
Pake / Ka : SC-100, SOT-669

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