SI4966DY-T1-GE3 Pricing (USD) [3973PC Stock]
- 2,500 pcs$0.43461
- Nimewo Pati:
- SI4966DY-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI4966DY-T1-GE3 electronic components. SI4966DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4966DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4966DY-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI4966DY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 8SOIC
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
25 mOhm @ 7.1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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