IXYS - IXFT70N15

KEY Part #: K6415989

IXFT70N15 Pricing (USD) [11347PC Stock]

  • 1 pcs$4.19740
  • 30 pcs$4.17651

Nimewo Pati:
IXFT70N15
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 150V 70A TO-268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS IXFT70N15 electronic components. IXFT70N15 can be shipped within 24 hours after order. If you have any demands for IXFT70N15, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT70N15 Atribi pwodwi yo

Nimewo Pati : IXFT70N15
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 150V 70A TO-268
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 28 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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