Nexperia USA Inc. - PSMN070-200P,127

KEY Part #: K6415222

PSMN070-200P,127 Pricing (USD) [12484PC Stock]

  • 1 pcs$1.38380
  • 10 pcs$1.24894
  • 100 pcs$0.95201
  • 500 pcs$0.74046
  • 1,000 pcs$0.61352

Nimewo Pati:
PSMN070-200P,127
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 200V 35A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN070-200P,127 electronic components. PSMN070-200P,127 can be shipped within 24 hours after order. If you have any demands for PSMN070-200P,127, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN070-200P,127 Atribi pwodwi yo

Nimewo Pati : PSMN070-200P,127
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 200V 35A TO220AB
Seri : TrenchMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 70 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4570pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 250W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3