STMicroelectronics - STW8N120K5

KEY Part #: K6416069

STW8N120K5 Pricing (USD) [11659PC Stock]

  • 1 pcs$3.53441

Nimewo Pati:
STW8N120K5
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 1200V 8A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STW8N120K5 Atribi pwodwi yo

Nimewo Pati : STW8N120K5
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 1200V 8A TO-247
Seri : MDmesh™ K5
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 13.7nC @ 10V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 505pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 130W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3