SSM3J117TU,LF Pricing (USD) [929174PC Stock]
- 1 pcs$0.04171
- 3,000 pcs$0.04150
- Nimewo Pati:
- SSM3J117TU,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CHANNEL 30V 2A UFM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3J117TU,LF electronic components. SSM3J117TU,LF can be shipped within 24 hours after order. If you have any demands for SSM3J117TU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J117TU,LF Atribi pwodwi yo
Nimewo Pati :
SSM3J117TU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CHANNEL 30V 2A UFM
Seri :
U-MOSII
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
117 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
280pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
UFM
Pake / Ka :
3-SMD, Flat Leads
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