Vishay Siliconix - SI2305CDS-T1-GE3

KEY Part #: K6421498

SI2305CDS-T1-GE3 Pricing (USD) [651126PC Stock]

  • 1 pcs$0.05681
  • 3,000 pcs$0.05384

Nimewo Pati:
SI2305CDS-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 8V 5.8A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Siliconix SI2305CDS-T1-GE3 electronic components. SI2305CDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2305CDS-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2305CDS-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI2305CDS-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 8V 5.8A SOT23-3
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 35 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 8V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 960pF @ 4V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 960mW (Ta), 1.7W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3