Nimewo Pati :
SI2305CDS-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 8V 5.8A SOT23-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
35 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
960pF @ 4V
Disipasyon Pouvwa (Max) :
960mW (Ta), 1.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3