TK160F10N1L,LQ Pricing (USD) [69651PC Stock]
- 1 pcs$0.56138
- Nimewo Pati:
- TK160F10N1L,LQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK160F10N1L,LQ electronic components. TK160F10N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK160F10N1L,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK160F10N1L,LQ Atribi pwodwi yo
Nimewo Pati :
TK160F10N1L,LQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
160A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
2.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
122nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10100pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-220SM(W)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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