Vishay Siliconix - IRF830AS

KEY Part #: K6414168

[12848PC Stock]


    Nimewo Pati:
    IRF830AS
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 500V 5A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRF830AS electronic components. IRF830AS can be shipped within 24 hours after order. If you have any demands for IRF830AS, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF830AS Atribi pwodwi yo

    Nimewo Pati : IRF830AS
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 500V 5A D2PAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 3A, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 620pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.1W (Ta), 74W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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