FDT86113LZ Pricing (USD) [293170PC Stock]
- 1 pcs$0.12680
- 4,000 pcs$0.12616
- Nimewo Pati:
- FDT86113LZ
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 3.3A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Diodes - Zener - Single and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDT86113LZ electronic components. FDT86113LZ can be shipped within 24 hours after order. If you have any demands for FDT86113LZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDT86113LZ Atribi pwodwi yo
Nimewo Pati :
FDT86113LZ
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 3.3A SOT223
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
315pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223-4
Pake / Ka :
TO-261-4, TO-261AA
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