Diodes Incorporated - BS107PSTOB

KEY Part #: K6411196

[13874PC Stock]


    Nimewo Pati:
    BS107PSTOB
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 200V 0.12A TO92-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated BS107PSTOB electronic components. BS107PSTOB can be shipped within 24 hours after order. If you have any demands for BS107PSTOB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BS107PSTOB Atribi pwodwi yo

    Nimewo Pati : BS107PSTOB
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 200V 0.12A TO92-3
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.6V, 5V
    RD sou (Max) @ Id, Vgs : 30 Ohm @ 100mA, 5V
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 500mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : E-Line (TO-92 compatible)
    Pake / Ka : E-Line-3

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