Nimewo Pati :
SUP60N02-4M5P-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 20V 60A TO220AB
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
5950pF @ 10V
Disipasyon Pouvwa (Max) :
3.75W (Ta), 120W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB