Vishay Siliconix - SUP60N02-4M5P-E3

KEY Part #: K6405901

[1505PC Stock]


    Nimewo Pati:
    SUP60N02-4M5P-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 20V 60A TO220AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SUP60N02-4M5P-E3 electronic components. SUP60N02-4M5P-E3 can be shipped within 24 hours after order. If you have any demands for SUP60N02-4M5P-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SUP60N02-4M5P-E3 Atribi pwodwi yo

    Nimewo Pati : SUP60N02-4M5P-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 20V 60A TO220AB
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 20A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 4.5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 5950pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.75W (Ta), 120W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220AB
    Pake / Ka : TO-220-3