PMZB290UNE,315 Pricing (USD) [1329372PC Stock]
- 1 pcs$0.03436
- 10,000 pcs$0.03419
- Nimewo Pati:
- PMZB290UNE,315
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 1A DFN1006B-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMZB290UNE,315 electronic components. PMZB290UNE,315 can be shipped within 24 hours after order. If you have any demands for PMZB290UNE,315, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZB290UNE,315 Atribi pwodwi yo
Nimewo Pati :
PMZB290UNE,315
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 20V 1A DFN1006B-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
380 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.68nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
83pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360mW (Ta), 2.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006B-3
Pake / Ka :
3-XFDFN
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